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| 2SA1357 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS) | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·High Collector Current-IC= -5.0A
·DC Current Gain-
: hFE= 70(Min)@IC= -4A
·Low Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -4A
APPLICATIONS
·Strobe flash applications.
·Audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-5
A
ICP
Collector Current-Pulse
-8
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ TC=25â
PC
Collector Power Dissipation
@ Ta=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
-1
A
10
W
1.5
150
â
-55~150
â
isc Product Specification
2SA1357
isc Websiteï¼www.iscsemi.cn
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