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| 2SA1263 Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – SILICON PNP TRIPLE DIFFUSED TYPE | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1263
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
-80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(on)
Base-Emitter On Voltage
IC= -3A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
-2.0 V
-1.5 V
-5 μ A
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5 μ A
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
55
160
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
35
COB
Output Capacitance
IE=0; VCB= -10V; ftest= 1.0MHz
fT
Current-GainâBandwidth Product
IC=-1A; VCE= -5V
290
pF
30
MHz
ïµ hFE-1 Classifications
R
O
55-110 80-160
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