2SA1263 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – SILICON PNP TRIPLE DIFFUSED TYPE

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1263
DESCRIPTION
·Low Collector Saturation Voltage-
: V_CE(sat)= -2.0V(Min) @I_C= -5A
·Good Linearity of h_FE
·Complement to Type 2SC3180
APPLICATIONS
·Power amplifier applications
·Recommend for 40W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO
Collector-Base Voltage
-80
V
V_CEO
Collector-Emitter Voltage
-80
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-6
A
I_B
Base Current-Continuous
P_C
Collector Power Dissipation
@ T_C=25℃
T_J
Junction Temperature
T_stg
Storage Temperature Range
-0.6
A
60
W
150
℃
-55~150 ℃
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