2SA1072 Datasheet, PDF (2/3 Pages) Fujitsu Component Limited. – SILICON HIGH SPEED POWER TRANSISTOR

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1072 2SA1073
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO
Collector-emitter
breakdown voltage
2SA1072
2SA1073
I_C=-1mA ;R_BE=∞
V_(BR)CBO
Collector-base
breakdown voltage
2SA1072
2SA1073
I_C=-50μA ;I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-50μA ;I_C=0
V_CEsat Collector-emitter saturation voltage I_C=-5A ;I_B=B -0.5A
V_BE
Base-emitter on voltage
I_C=-5A ; V_CE=-5V
I_CBO
Collector
cut-off current
I_CEO
Collector
cut-off current
2SA1072 V_CB=-120V; I_E=0
2SA1073 V_CB=-160V; I_E=0
2SA1072 VCE=-120V; RBE=∞
2SA1073 VCE=-160V; RBE=∞
I_EBO
Emitter cut-off current
V_EB=-7V; I_C=0
h_FE-1
DC current gain
I_C=-1A ; V_CE=-5V
h_FE-2
DC current gain
I_C=-7A ; V_CE=-5V
C_OB
Output capacitance
I_E=0 ; V_CB=-10V;f=1MHz
f_T
Transition frequency
I_C=-1A ; V_CE=-10V;f=10MHz
Switching times
t_r
Rise time
t_stg
Storage time
t_f
Fall time
I_C=-7.5A
I_B1=-I_B2=-0.75A;R_L=4Ω
MIN TYP. MAX UNIT
-120
V
-160
-120
V
-160
-7
V
-0.9 -1.8
V
-1.25 -1.7
V
-50
μA
-1
mA
-50
μA
60
200
40
300
pF
60
MHz
0.15
μs
0.50
μs
0.11
μs
2