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2SA1072 Datasheet, PDF (1/3 Pages) Fujitsu Component Limited. – SILICON HIGH SPEED POWER TRANSISTOR
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1072 2SA1073
DESCRIPTION
·With TO-3 package
·Complement to type 2SC2522/2523
·Excellent safe operating area
·Fast switching speed
APPLICATIONS
·High frequency power amplifier
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SA1072
2SA1073
Open emitter
VCEO
Collector-emitter voltage
2SA1072
2SA1073
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
PC
Collector power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
-120
-160
-120
-160
-7
-12
120
150
-65~150
UNIT
V
V
V
A
W
℃
℃