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| 2N6306 Datasheet, PDF (2/3 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A
VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=2A
VBEsat Base-emitter saturation voltage
IC=8A; IB=2A
VBE
Base-emitter on voltage
IC=3A ; VCE=5V
ICEV
Collector cut-off current
VCE=500V; VBE=-1.5V
ICEO
Collector cut-off current
VCE=250V; IB=0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=5V
hFE -2
DC current gain
IC=8A ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.3A ; VCE=10V;f=1MHz
Switching times
tr
Rise time
ts
Storage time
VCC=125V; IC=3.0A; IB=0.6A
tf
Fall time
Product Specification
2N6306
MIN TYP. MAX UNIT
250
V
0.8
V
5.0
V
2.3
V
1.3
V
0.5
mA
0.5
mA
1.0
mA
15
75
4
250
pF
5
MHz
0.6
μs
1.6
μs
0.4
μs
2
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