2N6306 Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High power dissipation
APPLICATIONS
·Designed for high voltage inverters,
switching regulators,line operated amplifiers,
and switching power supplies applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Product Specification
2N6306
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_c=25℃
VALUE
500
250
8
8
4
125
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃