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| 2N6302 Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar NPN Device | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1A
VCEsat-2 Collector-emitter saturation voltage IC=16A; IB=4A
VBEsat Base-emitter saturation voltage
IC=10A; IB=1A
VBE
Base-emitter on voltage
ICEV
Collector cut-off current
ICBO
Collector cut-off current
IC=8A ; VCE=4V
VCE=140V; VBE=-1.5V
TC=150â
VCB=140V; IE=0
ICEO
Collector cut-off current
VCE=70V; IB=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=4V
hFE -2
DC current gain
IC=16A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=10V;f=1MHz
Product Specification
2N6302
MIN TYP. MAX UNIT
140
V
1.0
V
2.0
V
1.8
V
1.5
V
1.0
5.0
mA
1.0
mA
2.0
mA
1.0
mA
15
60
4
0.2
MHz
2
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