2N6302 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6302
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High DC current gain @I_C=8A
APPLICATIONS
·Designed for use in high power audio
amplifier applications and high voltage
switching regulator circuits
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_c=25℃
VALUE
140
140
7
16
20
5
150
150
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W