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| 2N6251 Datasheet, PDF (2/2 Pages) Motorola, Inc – High Voltage NPN Silicon Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6251
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0
VCER
Collector-Emitter Sustaining Voltage IC= 200mA ; RBE= 50Ω
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1.67A
VBE(sat) Base-Emitter Saturation Voltage
ICEV
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 10A; IB= 1.67A
VCE= Rated VCEV; VBE= -1.5V
VCE= Rated VCEV; VBE= -1.5V;TC=125â
VCE= 300V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
Is/b
Second Breakdown Collector
Current with Base Forward Biased
fT
Current Gain-Bandwidth Product
Switching Times
IC= 10A ; VCE= 3V
VCE= 30V,t= 1.0s,Nonrepetitive
IC= 1A ; VCE= 10V; ftest= 1.0MHz
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 10A , VCC= 200V, IB1= -IB2= 1.67A
MIN MAX UNIT
350
V
375
V
1.5
V
2.25 V
5.0
10
mA
5.0 mA
1.0 mA
6
50
5.8
A
2.5
MHz
2.0 μs
3.5 μs
1.0 μs
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