2N6251 Datasheet, PDF (1/2 Pages) Motorola, Inc – High Voltage NPN Silicon Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6251
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 100V(Min)
·High Power Dissipation
APPLICATIONS
·Designed for high voltage, high current ,high speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
450
V
VCEO Collector-Emitter Voltage
350
V
VCEV Collector-Emitter Voltage
375
V
VCER Collector-Emitter Voltage
375
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
30
A
IB
Base Current-Continuous
10
A
PC
Collector Power Dissipation@TC=25℃ 175
W
TJ
Junction Temperature
200
℃
T_stg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
1.0
℃/W
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