2N6235 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6235
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1.0A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC=1A; IB= 0.1A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC=5A; IB= 1.0A
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 5V
ICEO
Collector Cutoff Current
VCE= 325V; IB= 0
ICBO
Collector Base Cutoff Current
VCB=350V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 1A ; VCE= 5V
hFE-3
DC Current Gain
IC= 3A ; VCE= 5V
fT
Current-Gain—Bandwidth Product I_C= 0.25A ; V_CE= 10V; f_test= 10MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 0.1MHz
MIN MAX UNIT
325
V
0.5
V
2.5
V
1.0
V
2.0
V
1.0
V
1.0
mA
0.1
mA
0.1
mA
25
25
125
10
20
MHz
250
pF
isc website：www.iscsemi.com
2 ^{isc & iscsemi is registered trademark}