2N6235 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N6235
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 325V(Min)
·DC Current Gain-
: hFE = 25-125@ IC= 1A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC = 1A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed f for high-voltage medium power and switching
reguators applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
325
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
PC
Collector Power Dissipation@TC=25℃
50
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.5
℃/W
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