2N6213 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – SI PNP POWER BJT

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6213
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-350
V
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -1mA ; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -125mA
-2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -125mA
-1.4
V
ICEV
Collector Cutoff Current
VCE= -360V; VBE(off)= -1.5V
-0.5 mA
ICEO
Collector Cutoff Current
VCE= -150V; IB= 0
-5.0 mA
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
-0.5 mA
hFE
DC Current Gain
IC= -1A ; VCE= -4V
10
100
fT
Current-Gain—Bandwidth Product
IC= -0.2A ;VCE= -10V,ftest= 5MHz
10
MHz
COB
Output Capacitance
IE=0;VCB= -10V;ftest= 1MHz
220 pF
Switching times
tr
Rise Time
ts
Storage Time
tf
Fall Time
IC= -1A , VCC= -200V;
IB1= -IB2= -125mA
0.6 μs
2.5 μs
0..6 μs
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