2N6213 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – SI PNP POWER BJT

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6213
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -350V(Min)
·Good Linearity of hFE
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high-speed switching and linear amplifier
application for high-voltage operational amplifier, switching
regulators, converters, inverters,deflection stages and high
fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-400
VCEO
Collector-Emitter Voltage
-350
VEBO
Emitter-Base Voltage
-6
IC
Collector Current-Continuous
-2
ICM
Collector Current-Peak
-5
IB
Collector Current-Continuous
-1
PC
Collector Power Dissipation
@ TC=25℃
35
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0 ℃/W
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