2N6129 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6129 2N6130 2N6131
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS)
Collector-emitter
sustaining voltage
2N6129
2N6130 IC=0.1A ;IB=0
2N6131
V_CEsat
Collector-emitter
saturation voltage
2N6129
2N6130 IC=7A;IB=1.2A
2N6131
V_BE
Base-emitter on voltage
I_C=2.5A ; V_CE=4V
I_CEV
Collector
cut-off current
2N6129
2N6130
2N6131
V_CE=40V;V_BE=1.5V
T_C=150
V_CE=60V;V_BE=1.5V
T_C=150
V_CE=80V; V_BE=1.5V
T_C=150
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
h_FE
DC current gain
f_T
Transition frequency
I_C=2.5A ; V_CE=4V
I_C=0.2A ; V_CE=4V
MIN TYP. MAX UNIT
40
60
V
80
1.4
V
1.8
1.4
V
0.5
3.0
mA
0.5
3.0
0.5
3.0
mA
1.0
mA
20
100
2.5
MHz
2