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2N6129 Datasheet, PDF (1/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6129 2N6130 2N6131
DESCRIPTION
With TO-220 package
High power dissipation
Complement to PNP type :
2N6132 2N6133 2N6134
APPLICATIONS
Power amplifier and medium speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N6129
VCBO
Collector-base voltage 2N6130
2N6131
2N6129
VCEO
Collector-emitter voltage 2N6130
2N6131
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
40
60
80
40
60
80
5
7
3
50
150
-65~150
UNIT
V
V
V
A
A
W
MAX
2.5
UNIT
/W