2N6109 Datasheet, PDF (2/2 Pages) List of Unclassifed Manufacturers – Complementary Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N6109
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA ;IB= 0
-50
V
VCE(_sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -3A
VBE(_on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= -7A ; VCE= -4V
VCE= -60V; VBE(_off)= -1.5V
VCE= -50V; VBE(_off)= -1.5V; TC= 150℃
VCE= -40V;IB= 0
-3.5
V
-3.0
V
-0.1
-2.0
mA
-1.0 mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1.0 mA
hFE-1
DC Current Gain
IC= -2.5A ; VCE= -4V
30
150
hFE-2
DC Current Gain
IC= -7A ; VCE= -4V
2.3
COB
Output Capacitance
IE= 0 ; VCB= -10V; f_test= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -0.5A ; VCE= -4V; f_test= 1MHz
250
pF
10
MHz
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