2N6109 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Complementary Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N6109
DESCRIPTION
·DC Current Gain-
: h_FE = 30-150@ I_C= -2.5A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= -50V(Min)
APPLICATIONS
·Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-10
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
T_stg
Storage Temperature Range
-3
A
40
W
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case
3.125 ℃/W
isc Website：www.iscsemi.cn