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| 2N6106 Datasheet, PDF (2/3 Pages) Boca Semiconductor Corporation – EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6106 2N6108 2N6110
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6106
2N6108 IC=-0.1A ;IB=0
2N6110
VCEsat Collector-emitter saturation voltage IC=-7A;IB=-3A
VBE
Base-emitter on voltage
IC=-7A ; VCE=-4V
2N6106 VCE=-20V; IB=0
ICEO
Collector cut-off current 2N6108 VCE=-40V; IB=0
2N6110 VCE=-60V; IB=0
2N6106
VCE=-40V; VBE=1.5V
VCE=-30V; BE=1.5V,TC=125
ICEX
Collector cut-off current 2N6108
VCE=-60V; VBE=1.5V
VCE=-50V; BE=1.5V,TC=125
2N6110
VCE=-80V; VBE=1.5V
VCE=-70V; BE=1.5V,TC=125
IEBO
Emitter cut-off current
VEB=-5V; IC=0
2N6106 IC=-2A ; VCE=-4V
hFE-1
DC current gain
2N6108 IC=-2.5A ; VCE=-4V
2N6110 IC=-3A ; VCE=-4V
hFE-2
DC current gain
IC=-7A ; VCE=-4V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-4V;f=1MHz
MIN TYP. MAX UNIT
-30
-50
V
-70
-3.5
V
-3.0
V
-1.0 mA
-0.1
-2.0
-0.1
-2.0
mA
-0.1
-2.0
-1.0 mA
30
150
2.3
250 pF
10
MHz
2
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