2N6106 Datasheet, PDF (1/3 Pages) Boca Semiconductor Corporation – EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6106 2N6108 2N6110
DESCRIPTION
With TO-220 package
With short pin
APPLICATIONS
Power amplifier and switching
circuits applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N6106
V_CBO
Collector-base voltage 2N6108
2N6110
2N6106
V_CEO
Collector-emitter voltage 2N6108
2N6110
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
VALUE
-40
-60
-80
-30
-50
-70
-5
-7
-10
-3
40
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
3.125
UNIT
/W