2N6052 Datasheet, PDF (2/2 Pages) ON Semiconductor – DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
isc Product Specification
2N6052
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0
-100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -24mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A; IB= -120mA
-3.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -12A; IB= -120mA
4.0
V
VBE(on) Base-Emitter On voltage
IC= -6A ; VCE= -3V
-2.8
V
ICEO
Collector Cutoff current
ICEX
Collector Cutoff current
IEBO
Emitter Cut-off current
VCE= -50V; IB=0
VCE= -100V;VBE(off)= -1.5V
VCE= -100V;VBE(off)= -1.5V,TC=150℃
VEB= -5V; IC= 0
-1.0
mA
-0.5
-5.0
mA
-2.0
mA
hFE-1
DC Current Gain
IC= -6A ; VCE= -3V
750 18000
hFE-2
DC Current Gain
IC= -12A ; VCE= -3V
100
COB
Output Capacitance
IE=0 ; VCB= -10V;ftest= 0.1MHz
500
pF
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