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2N6052 Datasheet, PDF (1/2 Pages) ON Semiconductor – DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | |||
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INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
isc Product Specification
2N6052
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 750 (Min) @ IC = -6A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -100V(Min)
·Complement to type 2N6059
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-12
A
ICM
Collector Current-Peak
-20
A
IB
Base Current
-0.2
A
PC
Collector Power Dissipation@TC=25â 150
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.17
UNIT
â/W
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