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| 2N5954 Datasheet, PDF (2/3 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON POWER TRANSISTORS | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5954 2N5955 2N5956
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5954
2N5955 IC=-0.1A ;IB=0
2N5956
VCEsat
VBE-1
Collector-emitter
saturation voltage
2N5954 IC=-2A; IB=-0.2A
2N5955 IC=-2.5A; IB=-0.25A
2N5956 IC=-3A; IB=-0.3A
2N5954 IC=-2A ; VCE=-4V
Base-emitter on voltage 2N5955 IC=-2.5A ; VCE=-4V
2N5956 IC=-3A ; VCE=-4V
VBE-2
Base-emitter on voltage
IC=-6A ; VCE=-4V
2N5954 VCE=-65V; IB=0
ICEO
Collector cut-off current 2N5955 VCE=-45V; IB=0
2N5956 VCE=-25V; IB=0
ICEV
Collector cut-off current(RBE=100 )
VCE=Rated VCE; VBE(off)=1.5V
TC=150
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
2N5954 IC=-2A ; VCE=-4V
2N5955 IC=-2.5A ; VCE=-4V
hFE-2
fT
DC current gain
Transition frequency
2N5956 IC=-3A ; VCE=-4V
IC=-6A ; VCE=-4V
IC=-1A;VCE=-4V;f=1.0MHz
MIN TYP. MAX UNIT
-80
-60
V
-40
-1.0
V
-2.0
V
-3.0
V
-1.0 mA
-0.1
-2.0
mA
-0.1 mA
20
100
5
5
MHz
2
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