2N5954 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON POWER TRANSISTORS

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5954 2N5955 2N5956
DESCRIPTION
With TO-66 package
Low collector saturation voltage
Excellent safe operating area
Complement to type 2N6372/6373/6374
APPLICATIONS
Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N5954
V_CBO
Collector-base voltage 2N5955
2N5956
2N5954
V_CEO
Collector-emitter voltage 2N5955
2N5956
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
-90
-70
-50
-80
-60
-40
-5
-6
-2
40
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
4.3
UNIT
/W