2N5885 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5885/5886
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
2N5885
2N5886
IC= 200mA ; IB= 0
VCE_(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VCE_(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 6.25A
VBE_(sat) Base-Emitter Saturation Voltage
IC= 25A; IB= 6.25A
VBE(_on) Base-Emitter On Voltage
IC= 10A ; VCE= 4V
ICEO
Collector
Cutoff Current
ICEX
Collector
Cutoff Current
ICBO
Collector
Cutoff Current
2N5885
2N5886
2N5885
2N5886
2N5885
2N5886
VCE= 30V; IB= 0
VCE= 40V; IB= 0
VCE= 60V; VBE(_off)= 1.5V
VCE= 60V; VBE(_off)= 1.5V,TC=150℃
VCE= 80V; VBE(_off)= 1.5V
VCE= 80V; VBE(_off)= 1.5V,TC=150℃
VCB= 60V; IE= 0
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 3A ; VCE= 4V
hFE-2
DC Current Gain
IC= 10A ; VCE= 4V
hFE-3
DC Current Gain
IC= 25A ; VCE= 4V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
Switching Times
IE= 0;VCB= 10V;f_test= 1MHz
IC= 1A ; VCE= 10V ;f_test= 1MHz
t_r
Rise Time
t_stg
Storage Time
t_f
Fall Time
IC= 10A; IB1= -IB2= 1A;VCC= 30V
MIN MAX UNIT
60
V
80
1.0
V
4.0
V
2.5
V
1.5
V
2.0
mA
2.0
1.0
10
mA
1.0
10
1.0
mA
1.0
1.0 mA
35
20 100
4
500 pF
4
MHz
0.7 μs
1.0 μs
0.8 μs
isc Website：www.iscsemi.cn
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