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| 2N5885 Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
·DC Current Gain-
: hFE= 20(Min)@IC= 10A
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 15A
·Complement to Type 2N5883/5884
APPLICATIONS
·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
2N5885
60
VCBO Collector-Base Voltage
V
2N5886
80
2N5885
60
VCEO Collector-Emitter Voltage
V
2N5886
80
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
7.5
A
PC
Collector Power Dissipation @TC=25â 200
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.875 â/W
isc Product Specification
2N5885/5886
isc Websiteï¼www.iscsemi.cn
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