2N5838 Datasheet, PDF (2/3 Pages) Motorola, Inc – HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5838 2N5839 2N5840
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N5838
250
V_CEO(SUS)
Collector-emitter
sustaining voltage
2N5839
I_C=0.1A ;I_B=0
275
V
2N5840
350
V_CEsat Collector-emitter saturation voltage I_C=2A; I_B=0.4A
0.8
V
V_BEsat Base-emitter saturation voltage
I_C=2A; I_B=0.4A
1.5
V
I_CBO
Collector cut-off current
V_CB=Rated V_CBO; I_E=0
1.0 mA
I_CEV
Collector cut-off current
V_CE= Rated V_CEO; V_BE(off)=1.5V
1.0 mA
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
1.0 mA
2N5838
I_C=3A ; V_CE=3V
h_FE
DC current gain
2N5839/5840 I_C=2A ; V_CE=3V
8
40
10
50
f_T
Transition frequency
I_C=1A ; V_CE=10V;f=1.0MHz
5
MHz
2