2N5838 Datasheet, PDF (1/3 Pages) Motorola, Inc – HIGH-VOLTAGE, HIGH-POWER SILICON N-P-N POWER TRANSISTORS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5838 2N5839 2N5840
DESCRIPTION
With TO-3 package
Low collector saturation voltage
High breakdown voltage
APPLICATIONS
For use in switching power supply and
other inductive switching circuits.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N5838
V_CBO
Collector-base voltage 2N5839
2N5840
2N5838
V_CEO
Collector-emitter voltage 2N5839
2N5840
V_EBO
Emitter-base voltage
I_C
Collector current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
275
300
375
250
275
350
6
3
100
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.25
UNIT
/W