2N5684 Datasheet, PDF (2/2 Pages) ON Semiconductor – High-Current Complementary Silicon Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N5684
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=-50mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-25A; IB=-2.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -50A; IB=-10A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -25A; IB=-2.5A
VBE(on) Base-Emitter On Voltage
IC= -25A ; VCE=-2V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
ICBO
Collector Cutoff Current
VCE=-40V; IB=0
VCE= -80V; VBE(off)= -1.5V
VCE= -80V; VBE(off)= -1.5V,TC=150℃
VCB= -80V; IC=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -25A ; VCE= -2V
hFE-2
DC Current Gain
fT
Current Gain-Bandwidth Product
IC= -50A ; VCE= -5V
IC= -5A ; VCE= -10V;f=1.0MHz
MIN MAX UNIT
-80
V
-1.0
V
-5.0
V
-2.0
V
-2.0
V
-1
mA
-2
-10
mA
-2
mA
-5
mA
15
60
5
2
MHz
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