2N5684 Datasheet, PDF (1/2 Pages) ON Semiconductor – High-Current Complementary Silicon Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N5684
DESCRIPTION
·High DC Current Gain-hFE=15~60@IC = -25A
·Low Saturation Voltage-
VCE(sat)= -1.0V(Max)@ IC = -25A
APPLICATIONS
·Designed for use in high power amplifer and switching
circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-50
A
IB
Base Current-Continuous
-15
A
PC
Collector Power Dissipation @TC=25℃ -300
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.584 ℃/W
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