2N5660 Datasheet, PDF (2/3 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5660 2N5661
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO
Collector-emitter
breakdown voltage
2N5660
2N5661
I_C=10mA ; I_B=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=10 A ; I_C=0
V_CEsat-1 Collector-emitter saturation voltage I_C=1A; I_B=0.1A
V_CEsat-2 Collector-emitter saturation voltage I_C=2A; I_B=0.4A
V_BEsat-1 Base-emitter saturation voltage
I_C=1A ;I_B=0.1A
V_BEsat-2 Base-emitter saturation voltage
I_C=2A; I_B=0.4A
2N5660 V_CE=200V;V_BE(off)=1.5V
I_CES
Collector cut-off current
2N5661 V_CE=300V;V_BE(off)=1.5V
2N5660 V_CB=250V; I_E=0
I_CBO
Collector cut-off current
2N5661 V_CB=400V; I_E=0
h_FE-1
DC current gain
2N5660
2N5661
I_C=50mA ; V_CE=2V
h_FE-2
DC current gain
2N5660
2N5661
I_C=0.5A ; V_CE=5V
h_FE-3
DC current gain
I_C=1A ; V_CE=5V
h_FE-4
DC current gain
I_C=2A ; V_CE=5V
C_OB
Output capacitance
I_E=0 ; V_CB=10V;f=1MHz
t_on
Turn-on time
2N5660 V_CC=100V;I_C=0.5A;I_B1=-I_B2=15mA
2N5661 V_CC=100V;I_C=0.5A;I_B1=-I_B2=25mA
t_off
Turn-off time
2N5660 V_CC=100V;I_C=0.5A;I_B1=-I_B2=15mA
2N5661 V_CC=100V;I_C=0.5A;I_B1=-I_B2=25mA
MIN TYP. MAX UNIT
200
V
300
6
V
0.4
V
0.8
V
1.2
V
1.5
V
0.2 mA
1.0 mA
40
25
40
120
25
75
15
5
45 pF
0.25
s
0.85
s
1.2
2