2N5660 Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5660 2N5661
DESCRIPTION
With TO-66 package
High breakdown voltage
APPLICATIONS
High speed switching and linear amplifier
High-voltage operational amplifiers
Switching regulators ,converters
Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
V_CBO
Collector-base voltage
2N5660
2N5661
Open emitter
V_CEO
Collector-emitter voltage
2N5660
2N5661
Open base
V_EBO
Emitter-base voltage
Open collector
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
T_C=100
T_a=25
VALUE
250
400
200
300
6
2.0
0.5
20
2
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
MAX
5.0
UNIT
/W