2N5632 Datasheet, PDF (2/3 Pages) Central Semiconductor Corp – SILICON POWER TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5632 2N5633 2N5634
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2N5632
100
V_CEO(SUS)
Collector-emitter
sustaining voltage
2N5633 IC=0.2A ;IB=0
120
2N5634
140
V_CEsat-1 Collector-emitter saturation voltage I_C=7A; I_B=0.7A
V_CEsat-2 Collector-emitter saturation voltage I_C=10A ;I_B=2A
V_BEsat Base-emitter saturation voltage
I_C=10A ;I_B=2A
V_BE
Base-emitter on voltage
I_C=5A ; V_CE=5V
2N5632 V_CE=50V; I_B=0
I_CEO
Collector cut-off current 2N5633 V_CE=60V; I_B=0
2N5634 V_CE=70V; I_B=0
I_CEV
Collector cut-off current
V_CE=ratedV_CB; V_BE(off)=1.5V
T_C=150
I_EBO
Emitter cut-off current
V_EB=7V; I_C=0
2N5632
25
h_FE
DC current gain
2N5633 IC=5A ; VCE=5V
20
2N5634
15
f_T
Transition frequency
I_C=1A ; V_CE=20V
1.0
TYP. MAX UNIT
V
1.0
V
3.0
V
2.5
V
1.5
V
1.0
mA
1.0
5.0
mA
1.0
mA
100
80
60
MHz
2