2N5632 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON POWER TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5632 2N5633 2N5634
DESCRIPTION
With TO-3 package
Low collector saturation voltage
High DC current gain
APPLICATIONS
For general-purpose power amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N5632
V_CBO
Collector-base voltage 2N5633
2N5634
2N5632
V_CEO
Collector-emitter voltage 2N5633
2N5634
V_EBO
Emitter-base voltage
I_C
Collector current
P_D
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
100
120
140
100
120
140
7
10
150
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.1
UNIT
/W