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| 2N5611A Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBE
Base-emitter on voltage
IC=-2.5A ; VCE=-5V
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
ICEO
Collector cut-off current
VCE= Rated VCEO,IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-2.5A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-10V
Product Specification
2N5611A
MIN TYP. MAX UNIT
-100
V
-0.5
V
-1.5
V
-0.1 mA
-1.0 mA
-0.1 mA
30
150
60
MHz
2
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