2N5611A Datasheet, PDF (1/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5611A
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Low collector saturation voltage
APPLICATIONS
·For general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25℃
VALUE
-120
-100
-5
-5
25
150
-65~150
UNIT
V
V
V
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
4.37
UNIT
℃/W