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| 2N5493 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5493
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; RBE= 100Ω
VCEV(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; VBE= -1.5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
VBE(on) Base-Emitter On Voltage
ICEV
Collector Cutoff Current
ICER
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2.5A ; VCE= 4V
VCE= 70V; VBE= -1.5V
VCE= 70V; VBE= -1.5V;TC= 125â
VCE= 55V; RBE= 100Ω
VCE= 55V; RBE= 100Ω; TC= 125â
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 2.5A ; VCE= 4V
fT
Current-GainâBandwidth Product IC= 0.5A ; VCE= 4V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= 2.5A; IB1= -IB2= 0.25A
MIN MAX UNIT
55
V
65
V
75
V
1.0
V
1.3
V
1.0
5.0
mA
0.5
3.5
mA
1.0
mA
20
100
0.8
MHz
5
μs
15
μs
isc Websiteï¼www.iscsemi.cn
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