2N5493 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5493
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 55V(Min)
·Low Saturation Voltage-
: V_{CE (sat)}= 1V(Max)@I_C= 2.5A
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CBO
Collector-Base Voltage
75
V_CEV
Collector-Emitter Voltage
V_BE= -1.5V
75
V_CER
Collector-Emitter Voltage
R_BE= 100Ω
65
V_CEO
Collector-Emitter Voltage
55
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current-Continuous
7
I_BB
Base Current
3
Collector Power Dissipation
P_C
@ T_a=25℃
Collector Power Dissipation
@ T_C=25℃
1.8
50
T_J
Junction Temperature
150
T_stg
Storage Temperature Range
-65~150
UNIT
V
V
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.5 ℃/W
70 ℃/W
isc Website：www.iscsemi.cn