 English |
|
|
|
|
|
|
|
| 2N5415 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP high-voltage transistors | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2N5415
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 175V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 50mA ; VCE= 10V
fT
Current-GainâBandwidth Product IC= 10mA ; VCE= 10V
MIN TYP. MAX UNIT
0.5
V
50 μA
20 μA
30
150
15
MHz
isc websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese