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| 2N5415 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP high-voltage transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·PNP high-voltage transistor
·Low current (max. 200 mA)
·High voltage (max. 300 V)
isc Product Specification
2N5415
APPLICATIONS
·Designed for Switching and linear
amplification in military, industrial
and consumer equipment applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
0.2
A
ICM
Peak Collector Current
0.4
A
IBM
Peak Base cCurrent
Collector Power Dissipation
@ Ta<50â
PC
Collector Power Dissipation
@ TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
0.2
A
1.0
W
10
200
â
-60~200 â
isc websiteï¼www.iscsemi.cn
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