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| 2N5301 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(200W) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5301 2N5302 2N5303
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5301
2N5302
2N5303
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter
saturation voltage
2N5301/5302
2N5303
IC=10A; IB=1A
VCEsat-2
Collector-emitter
saturation voltage
2N5301/5302
2N5303
IC=20A ;IB=2A
IC=15A ;IB=1.5A
VCEsat-3
Collector-emitter
saturation voltage
2N5301/5302
2N5303
IC=30A ;IB=6A
IC=20A ;IB=4A
VBEsat-1 Base-emitter saturation voltage
IC=10A; IB=1A
VBEsat-2
Base-emitter
saturation voltage
2N5301/5302
2N5303
IC=15A ;IB=1.5A
VBEsat-3
Base-emitter
saturation voltage
2N5301/5302
2N5303
IC=20A ;IB=2A
IC=20A ;IB=4A
VBE-1
Base-emitter
on voltage
2N5301/5302
2N5303
IC=15A ; VCE=2V
IC=10A ; VCE=2V
VBE-2
ICEX
ICEO
Base-emitter
on voltage
2N5301/5302
2N5303
Collector cut-off current
Collector cut-off current
IC=30A ; VCE=4V
IC=20A ; VCE=4V
VCE= Rated VCEO; VBE(off)=1.5V
TC=150
VCE=Rated VCEO; IB=0
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
2N5303
2N5301/5302
IC=10A ; VCE=2V
IC=15A ; VCE=2V
hFE-3
DC current gain
2N5303
2N5301/5302
IC=20A ; VCE=4V
IC=30A ; VCE=4V
fT
Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
MIN TYP. MAX UNIT
40
60
V
80
0.75
V
1.0
2.0
V
1.5
3.0
V
2.0
1.7
V
1.8
V
2.0
2.5
V
1.7
V
1.5
3.0
V
2.5
1.0
10
mA
5.0 mA
1.0 mA
5.0 mA
40
15
60
5
2
MHz
2
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