2N5301 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(200W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5301 2N5302 2N5303
DESCRIPTION
With TO-3 package
Complement to type 2N4398/4399/5745
Low collector/saturation voltage
Excellent safe operating area
APPLICATIONS
For use in power amplifier and switching
circuits applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N5301
V_CBO
Collector-base voltage 2N5302
2N5303
2N5301
V_CEO
Collector-emitter voltage 2N5302
2N5303
V_EBO
Emitter-base voltage
I_C
Collector current
2N5301/5302
2N5303
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
40
60
80
40
60
80
5
30
20
7.5
200
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
0.875
UNIT
/W