2N5240 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5240
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;IB= 0
300
V
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;RBE≤ 50Ω
350
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.02A; IC= 0
6
V
VCE(_sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.25A
VCE(_sat)-2 Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.125A
VBE(_on) Base-Emitter On Voltage
ICEV
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 2A ; VCE= 10V
VCE=375V; VBE= -1.5V
VCE=300V; VBE= -1.5V;TC= 150℃
VCE= 200V; IB= 0
2.5 V
5.0 V
3.0 V
2
3
mA
2 mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
5 mA
hFE-1
DC Current Gain
IC= 0.4A; VCE= 10V
20
80
hFE-2
DC Current Gain
IC= 2A; VCE= 10V
20
80
hFE-3
DC Current Gain
IC= 4.5A; VCE= 10V
5
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
2
MHz
COB
Output Capacitance
IE= 0; VCB= 10V; f_test= 1.0MHz
250 pF
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