2N5240 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5240
DESCRIPTION
·High Voltage-
: V_CEO(SUS)= 300V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in series regulators, power amplifiers,
inverters, deflection circuits, switching regulators, and
high-voltage bridge amplifiers.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCER(SUS)
Collector-Emitter Voltage
RBE≤50Ω
VCEO(SUS) Collector-Emitter Voltage
375
V
350
V
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
IB
Base Current
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
T_stg
Storage Temperature Range
2
A
100
W
200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.75 ℃/W
isc Website：www.iscsemi.cn