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| 2N5239 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – HIGH-VOLTAGE, SILLCON N-P-N TRANSISTOR | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=20mA ; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=2A; IB=0.25A
VCEsat-2 Collector-emitter saturation voltage IC=4.5A; IB=1.125A
VBE
Base-emitter on voltage
ICEV
Collector cut-off current
ICEO
Collector cut-off current
IC=2A ; VCE=10V
VCE=300V; VBE=-1.5V
TC=150
VCE=200V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.4A ; VCE=10V
hFE -2
DC current gain
IC=2A ; VCE=10V
hFE-3
DC current gain
IC=4.5A ; VCE=10V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.2A ; VCE=10V
Product Specification
2N5239
MIN TYP. MAX UNIT
225
V
6
V
2.5
V
5.0
V
3.0
V
4.0
5.0
mA
5.0
mA
5.0
mA
20
80
5
250
pF
2
MHz
2
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