2N5239 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – HIGH-VOLTAGE, SILLCON N-P-N TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5239
DESCRIPTION
With TO-3 package
High breakdown voltage
High power dissipation
APPLICATIONS
Switching regulator
Inverters
Power amplifiers
Deflection circuits
High-voltage bridge amplifiers
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_B
Base current
P_T
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_c=25
VALUE
300
225
6
5
2
100
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance from junction to case
MAX
1.75
UNIT
/W