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| 2N5050 Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO66 Metal Package | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5050 2N5051 2N5052
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5050
2N5051 IC=0.1A ;IB=0
2N5052
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.5A
VBE
Base-emitter on voltage
IC=750mA ; VCE=5V
2N4910 VCE=125V; IB=0
ICEO
Collector cut-off current 2N4911 VCE=150V; IB=0
2N4912 VCE=200V; IB=0
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=Rated VCBO; IE=0
VEB=7V; IC=0
IC=750mA ; VCE=5V
fT
Transition frequency
IC=500mA;VCE=10V;f=1MHz
MIN TYP. MAX UNIT
125
150
V
200
1.2
V
1.5
V
1.2
V
5.0 mA
0.1 mA
1.0 mA
25
100
10
MHz
2
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