2N5050 Datasheet, PDF (1/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5050 2N5051 2N5052
DESCRIPTION
With TO-66 package
High breakdown voltage
Excellent safe operating area
APPLICATIONS
Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N5050
V_CBO
Collector-base voltage 2N5051
2N5052
2N5050
V_CEO
Collector-emitter voltage 2N5051
2N5052
V_EBO
I_C
P_D
Emitter-base voltage
Collector current
Total Power Dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
125
150
200
125
150
200
7
2
40
150
-65~200
UNIT
V
V
V
A
W
VALUE
7.0
UNIT
/W