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| 2N5038 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,140W) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5038 2N5039
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5038
2N5039
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter
saturation voltage
2N5038
2N5039
IC=12A ;IB=1.2A
IC=10A ;IB=1A
VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=5A
VBEsat Base-emitter saturation voltage
IC=20A ;IB=5A
2N5038 IC=12A ; VCE=5V
VBE
Base-emitter on voltage
2N5039 IC=10A ; VCE=5V
2N5038 VCE=70V; IB=0
ICEO
Collector cut-off current
2N5039 VCE=55V; IB=0
ICEX
Collector cut-off current
2N5038
2N5039
VCE=140V; VBE=-1.5V
VCE=100V; VBE=-1.5V ;TC=150
VCE=110V; VBE=-1.5V
VCE=85V; VBE=-1.5V TC=150
2N5038
IEBO
Emitter cut-off current
VEB=5V; IC=0
2N5039
hFE-1
DC current gain
IC=2A ; VCE=5V
hFE-2
DC current gain
2N5038
2N5039
Is/b
Second breakdown collector current
Switching times
IC=12A ; VCE=5V
IC=10A ; VCE=5V
VCE=28V,
VCE=45V(t=1.0s Nonrepetitive)
tr
Rise time
ts
Storage time
tf
Fall time
For 2N5038
IC=12A ;IB1=- IB2=1.2A ;VCC=30V
For 2N5039
IC=10A ;IB1=- IB2=1A ;Vcc=30V
MIN TYP MAX UNIT
90
V
75
1.0
V
2.5
V
3.3
V
1.8
V
20 mA
5.0
10
mA
5.0
10
5
mA
15
50
250
20
100
5
0.9
A
0.5
s
1.5
s
0.5
s
2
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